The Japan Society of Applied Physics

3:00 PM - 5:00 PM

[PS-9-12(Late News)] Gate-stack Engineering of Self-organized Nanospherical Ge-gate/SiO2/Si1-xGex-channel on Si (100) and Si (110) for Ge MOS Devices

P. H. Liao1, C. W. Tien2, K. P. Peng2, H. C. Lin2, T. George1,P. W. Li1,2 (1.National Central Univ.(Taiwan), 2.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-9-12L