Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window

K. Koi

doi:https://doi.org/10.7567/SSDM.2017.A-5-02

10:00 AM - 10:20 AM

[A-5-02] Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window

^○K. Koi¹, H. Yoda¹, N. Shimomura¹, T. Inokuchi¹, Y. Kato¹, B. Altansargai¹, S. Shirotori¹, Y. Kamiguchi¹, K. Ikegami¹, S. Oikawa¹, H. Sugiyama¹, M. Shimizu¹, M. Ishikawa¹, T. Ajay¹, Y. Ohsawa¹, Y. Saito¹, A. Kurobe¹ (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2017.A-5-02

2017 International Conference on Solid State Devices and Materials

[A-5-02] Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window