2017 International Conference on Solid State Devices and Materials
Sep 19, 2017 - Sep 22, 2017 Sendai International Center
3:40 PM - 4:00 PM
[A-8-02] Origin of the difference between high resistive and low resistive structures for interfacial phase change memories based on GeTe/Sb2Te3 superlattice
○H. Shirakawa1, M. Araidai1, K. Shiraishi1 (1.Nagoya Univ. (Japan))
