Neuromorphic Transistor Achieved by Redox Reaction of WO<sub>3</sub> Thin Film

M. Jayabalan

doi:https://doi.org/10.7567/SSDM.2017.D-4-02

14:30 〜 14:45

[D-4-02] Neuromorphic Transistor Achieved by Redox Reaction of WO₃ Thin Film

^○M. Jayabalan^1,2, K. Kawamura^1,3, M. Takayanagi^1,3, T. Tsuchiya¹, T. Higuchi³, R. Jayavel², K. Terabe¹ (1.NIMS (Japan), 2.Anna Univ. (India), 3.Tokyo Univ. of Sci. (Japan))

https://doi.org/10.7567/SSDM.2017.D-4-02

2017 International Conference on Solid State Devices and Materials

[D-4-02] Neuromorphic Transistor Achieved by Redox Reaction of WO3 Thin Film

[D-4-02] Neuromorphic Transistor Achieved by Redox Reaction of WO₃ Thin Film