Reliability Characterizations for high-performance, low-power 10nm-FinFET technology

K. Choi

doi:https://doi.org/10.7567/SSDM.2017.E-1-01

1:30 PM - 2:00 PM

[E-1-01 (Invited)] Reliability Characterizations for high-performance, low-power 10nm-FinFET technology

^○K. Choi¹, M. Jin¹, Jinju Kim¹, Jungin Kim¹, H. Sagong¹, Y. Kim¹, H. Shim¹, K. Kim¹, G. Kim¹, S. Lee¹, T. Uemura¹, J. Park¹, S. Shin¹, S. Pae¹ (1.Samsung Electronics Co., Ltd. (Korea))

https://doi.org/10.7567/SSDM.2017.E-1-01

2017 International Conference on Solid State Devices and Materials

[E-1-01 (Invited)] Reliability Characterizations for high-performance, low-power 10nm-FinFET technology