The Japan Society of Applied Physics

16:10 〜 16:30

[E-2-02] Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-Insulator pMOSFET Fabricated by Ge Condensation

K. -W. Jo1, W. -K. Kim1, M. Takenaka1, S. Takagi1 (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.E-2-02