14:20 〜 14:40

[E-4-02] Investigation of Quantum-Induced VT Shift and Backgate-Modulated VT Properties for Ultra-Thin-Body InGaAs-OI/SOI Negative-Capacitance FETs

^○S. -E. Huang¹, C. -L. Yu¹, W. -X. You¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.E-4-02