The Japan Society of Applied Physics

2:20 PM - 2:40 PM

[E-4-02] Investigation of Quantum-Induced VT Shift and Backgate-Modulated VT Properties for Ultra-Thin-Body InGaAs-OI/SOI Negative-Capacitance FETs

S. -E. Huang1, C. -L. Yu1, W. -X. You1, P. Su1 (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.E-4-02