Lowering Minimum Operation Voltage (V<sub>min</sub>) in SRAM Array by Post-Fabrication Self-Improvement of Cell Stability by Multiple Stress Application

10:35 AM - 10:50 AM

[E-5-04 (Late News)] Lowering Minimum Operation Voltage (V_min) in SRAM Array by Post-Fabrication Self-Improvement of Cell Stability by Multiple Stress Application

^○T. Mizutani¹, K. Takeuchi¹, T. Saraya¹, M. Kobayashi¹, T. Hiramoto¹ (1.Univ. of Tokyo (Japan))