The Japan Society of Applied Physics

16:25 〜 16:40

[G-2-03] Reduction of Impurity Incorporation into MOVPE-grown GaN films on ScAlMgO4 Substrate

T. Iwabuchi1, S. Kuboya1, C. Hagiwara1, T. Tanikawa1, T. Hanada1, T. Fukuda2, T. Matsuoka1 (1.Tohoku Univ. (Japan), 2.Fukuda Crystal Lab. (Japan))

https://doi.org/10.7567/SSDM.2017.G-2-03