16:25 〜 16:40

[G-2-03] Reduction of Impurity Incorporation into MOVPE-grown GaN films on ScAlMgO₄ Substrate

^○T. Iwabuchi¹, S. Kuboya¹, C. Hagiwara¹, T. Tanikawa¹, T. Hanada¹, T. Fukuda², T. Matsuoka¹ (1.Tohoku Univ. (Japan), 2.Fukuda Crystal Lab. (Japan))

https://doi.org/10.7567/SSDM.2017.G-2-03