09:45 〜 10:00

[G-3-02] Sublattice Reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity

^○X. Lu¹, Y. Minami¹, N. Kumagai², T. Kitada¹ (1.Tokushima Univ. (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2017.G-3-02