Sublattice Reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity

9:45 AM - 10:00 AM

[G-3-02] Sublattice Reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity

^○X. Lu¹, Y. Minami¹, N. Kumagai², T. Kitada¹ (1.Tokushima Univ. (Japan), 2.AIST (Japan))