The Japan Society of Applied Physics

11:45 〜 12:05

[G-6-02] A 28nm High- k/Metal-gate Symmetric 10T 2RW Dual-port SRAM bitcell design

T. Y. Lu1, C. H. Huang1, S. S. Chen1, Y. T. Kuo1, C. C. Lung1, O. Cheng1, Y. Ishii2, M. Tanaka2, M. Yabuuchi2, Y. Sawada2, S. Tanaka2,K. Nii2 (1.United Microelectronics Corp. (Taiwan), 2.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2017.G-6-02