10:20 〜 10:40

[H-5-03] The large-area backside etching method by changing backside layout using loading effect and ARDE for foundry-based fabrication

Y. Okamoto¹, ^○Y. Tohyama¹, N. Usami¹, Y. Mita¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.H-5-03