11:45 AM - 12:00 PM

[H-6-02] Membrane-based GaInAs/InP waveguide-type p-i-n photodetector fabricated on Si substrate using Benzocyclobutene bonding

^○Z. Gu¹, T. Uryu¹, D. Inoue¹, T. Amemiya¹, N. Nishiyama¹, S. Arai¹ (1.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2017.H-6-02