The Japan Society of Applied Physics

10:00 〜 10:15

[J-3-02] Low-Resistance Contact to Single-Layer MoS2 by Depositing Ultrathin High-k Dielectric with Remote N2 Plasma Treatment as Tunneling Layer

Q. Qian1, Z. Zhang1, M. Hua1, J. Wei1, J. Lei1, K. J. Chen1 (1.Hong Kong Univ. of Sci. and Tech. (Hong Kong))

https://doi.org/10.7567/SSDM.2017.J-3-02