Low-Resistance Contact to Single-Layer MoS<sub>2</sub> by Depositing Ultrathin High-k Dielectric with Remote N<sub>2</sub> Plasma Treatment as Tunneling Layer

10:00 AM - 10:15 AM

[J-3-02] Low-Resistance Contact to Single-Layer MoS₂ by Depositing Ultrathin High-k Dielectric with Remote N₂ Plasma Treatment as Tunneling Layer

^○Q. Qian¹, Z. Zhang¹, M. Hua¹, J. Wei¹, J. Lei¹, K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech. (Hong Kong))