10:30 〜 10:45
[J-3-04] Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure
○N. Hayakawa1, I. Muneta1, T. Ohashi1, K. Matsuura1, J. Shimizu1, K. Kakushima1, K. Tsustui1, H. Wakabayashi1
(1.Tokyo Tech (Japan))
https://doi.org/10.7567/SSDM.2017.J-3-04