14:20 〜 14:40

[K-1-03] Consideration on the interfacial dipole layer formation at non-SiO₂ oxide interfaces in the examples of MgO/Al₂O₃ and HfO₂/Al₂O₃

^○J. Fei¹, K. Kita¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.K-1-03