CMOS Integration of Thermally Stable Diffusion and Gate Replacement (D&GR) High-k/Metal Gate Stacks in DRAM Periphery Transistors

E. Dentoni Litta

doi:https://doi.org/10.7567/SSDM.2017.K-4-02

14:30 〜 14:50

[K-4-02] CMOS Integration of Thermally Stable Diffusion and Gate Replacement (D&GR) High-k/Metal Gate Stacks in DRAM Periphery Transistors

^○E. Dentoni Litta¹, R. Ritzenthaler¹, T. Schram¹, A. Spessot¹, B. O'Sullivan¹, Y. Ji², G. Mannaert¹, C. Lorant¹, F. Sebaai¹, A. Thiam¹, M. Ercken¹, S. Demuynck¹, N. Horiguchi¹ (1.IMEC (Belgium), 2.SK Hynix (Korea))

https://doi.org/10.7567/SSDM.2017.K-4-02

2017 International Conference on Solid State Devices and Materials

[K-4-02] CMOS Integration of Thermally Stable Diffusion and Gate Replacement (D&GR) High-k/Metal Gate Stacks in DRAM Periphery Transistors