15:10 〜 15:30

[K-4-04] Hot-C⁺-Ion Implantation Optimization for Forming Nano-SiC Region at Surface (100)SOI Substrate

^○T. Mizuno¹, Y. Omata¹, S. Nakada¹, T. Aoki¹, T. Sasaki² (1.Kanagawa Univ. (Japan), 2.Toshiba Nanoanalysis Corp. (Japan))

https://doi.org/10.7567/SSDM.2017.K-4-04