SiC Nano-Dots in Bulk-Si SubstrateFabricated by Hot-C<sup>+</sup>-Ion Implantation Technique

T. Mizuno

doi:https://doi.org/10.7567/SSDM.2017.M-3-04

10:30 AM - 10:45 AM

[M-3-04] SiC Nano-Dots in Bulk-Si SubstrateFabricated by Hot-C⁺-Ion Implantation Technique

^○T. Mizuno¹, S. Nakada¹, M. Yamamoto¹, S. Irie¹, Y. Omata¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ. (Japan), 2.Tokyo Univ. of Agri. & Tech. (Japan))

https://doi.org/10.7567/SSDM.2017.M-3-04

2017 International Conference on Solid State Devices and Materials

[M-3-04] SiC Nano-Dots in Bulk-Si SubstrateFabricated by Hot-C+-Ion Implantation Technique

[M-3-04] SiC Nano-Dots in Bulk-Si SubstrateFabricated by Hot-C⁺-Ion Implantation Technique