14:00 〜 14:15

[M-4-01] High Substitutional-Sn-Concentration GeSn-on-Insulator by Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (~170°C)

^○T. Sugino¹, K. Moto¹, R. Matsumura¹, H. Ikenoue¹, M. Miyao¹, T. Sadoh¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.M-4-01