The Japan Society of Applied Physics

14:15 〜 14:30

[M-4-02] Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water

K. Takahashi1,2, M. Kurosawa1,3, H. Ikenoue4, M. Sakashita1, O. Nakatsuka1, S. Zaima1 (1.Nagoya Univ. (Japan), 2.JSPS Res. Fellow (Japan), 3.PRESTO-JST (Japan), 4.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.M-4-02