Dopants behavior in polycrystallization of heavily doped Ge<sub>1-x</sub>Sn<sub>x</sub> layer using pulsed laser annealing in water

K. Takahashi

doi:https://doi.org/10.7567/SSDM.2017.M-4-02

14:15 〜 14:30

[M-4-02] Dopants behavior in polycrystallization of heavily doped Ge_1-xSn_x layer using pulsed laser annealing in water

^○K. Takahashi^1,2, M. Kurosawa^1,3, H. Ikenoue⁴, M. Sakashita¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ. (Japan), 2.JSPS Res. Fellow (Japan), 3.PRESTO-JST (Japan), 4.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.M-4-02

2017 International Conference on Solid State Devices and Materials

[M-4-02] Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water

[M-4-02] Dopants behavior in polycrystallization of heavily doped Ge_1-xSn_x layer using pulsed laser annealing in water