Materials growth and band offset parameters of the Al2O3/In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure

S. H. Huynh

doi:https://doi.org/10.7567/SSDM.2017.M-5-04

10:30 〜 10:45

[M-5-04] Materials growth and band offset parameters of the Al₂O₃/In_0.28Ga_0.72Sb/AlSb/GaSb/GaAs heterostructure

^○S. H. Huynh¹, M. T. H. Ha¹, H. B. Do¹, T. A. Nguyen¹, Y. D. Jin¹, J. W. Lin¹, K. S. Yang¹, C. -C. F. Chang¹, Q. H. Luc¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.M-5-04

2017 International Conference on Solid State Devices and Materials

[M-5-04] Materials growth and band offset parameters of the Al2O3/In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure

[M-5-04] Materials growth and band offset parameters of the Al₂O₃/In_0.28Ga_0.72Sb/AlSb/GaSb/GaAs heterostructure