16:25 〜 16:40

[N-2-03] Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface

^○D. Hosomi¹, Y. Miyachi¹, T. Egawa¹, M. Miyoshi¹ (1.Nagoya Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2017.N-2-03