Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diodes

S. Hayashi

doi:https://doi.org/10.7567/SSDM.2017.N-2-04

4:40 PM - 4:55 PM

[N-2-04] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diodes

^○S. Hayashi^1,2, T. Yamashita^1,3, J. Senzaki¹, M. Miyazato^1,4, M. Ryo^1,4, M. Miyajima^1,4, Y. Yonezawa¹, T. Kato¹, K. Kojima¹, H. Okumura¹ (1.AIST (Japan), 2.Toray Research Center Inc. (Japan), 3.SHOWA DENKO K.K. (Japan), 4.Fuji Electric Co. Ltd. (Japan))

https://doi.org/10.7567/SSDM.2017.N-2-04

2017 International Conference on Solid State Devices and Materials

[N-2-04] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diodes