5:10 PM - 5:25 PM

[N-2-06 (Late News)] AlN metal-semiconductor field-effect transistors using Si-ion implantation

^○H. Okumura^1,2, S. Suihkonen³, J. Lemettinen³, A. Uedono¹, T. Palacios² (1.Univ. of Tsukuba (Japan), 2.MIT (USA), 3.Aalto Univ. (Finland))

https://doi.org/10.7567/SSDM.2017.N-2-06