Monolithically Integrated GaN-on-Si Power Circuits

R. Reiner

doi:https://doi.org/10.7567/SSDM.2017.N-3-01

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜 2017年9月22日
Sendai International Center

09:30 〜 10:00

[N-3-01 (Invited)] Monolithically Integrated GaN-on-Si Power Circuits

^○R. Reiner¹, P. Waltereit¹, B. Weiss¹, S. Moench², R. Quay¹, O. Ambacher³ (1.Fraunhofer IAF (Germany), 2.Univ. of Stuttgart (Germany), 3.Univ. of Freiburg (Germany))

https://doi.org/10.7567/SSDM.2017.N-3-01

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