10:15 〜 10:30

[N-3-03] Impact of Crystal Orientation on Ohmic Contact Resistance of Enhancement-Mode pGaN Gate High Electron Mobility Transistors on 200 mm Si Substrates

^○M. Van Hove¹ (1.IMEC (Belgium))

https://doi.org/10.7567/SSDM.2017.N-3-03