The Japan Society of Applied Physics

10:45 AM - 11:00 AM

[N-3-05] Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate

T. Sato1, K. Uryu1, J. Okayasu1, M. Kimishima1, T. Suzuki2 (1.Advantest Labs. Ltd. (Japan), 2.JAIST (Japan))

https://doi.org/10.7567/SSDM.2017.N-3-05