Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate

T. Hoshii

doi:https://doi.org/10.7567/SSDM.2017.N-4-03

2:45 PM - 3:00 PM

[N-4-03] Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate

^○T. Hoshii¹, R. Takayama¹, A. Nakajima², S. Nishizawa³, H. Ohashi¹, K. Kakushima¹, H. Wakabayashi¹, K. Tsutsui¹ (1.Tokyo Tech (Japan), 2.AIST (Japan), 3.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.N-4-03

2017 International Conference on Solid State Devices and Materials

[N-4-03] Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate