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[N-4-04 (Late News)] MOVPE Growth Behavior of AlGaN/GaN Heterostructures with AlGaN Directly on RIE-GaN Showing a High Electron Mobility (>1300 cm²/Vs)

^○A. Yamamoto¹, K. Kanatani¹, S. Makino¹, M. Kuzuhara¹ (1.Univ. of Fukui (Japan))

https://doi.org/10.7567/SSDM.2017.N-4-04