10:00 〜 10:15

[N-5-02] Suppression of Positive Bias Temperature Instability in GaN-MOSFETs

^○Y. Kajiwara¹, T. Yonehara¹, D. Kato¹, H. Saito¹, K. Uesugi¹, A. Shindome¹, M. Kuraguchi¹, A. Yoshioka¹, S. Nunoue¹ (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2017.N-5-02