11:45 〜 12:00

[N-6-02] 5.0 kV Breakdown-Voltage Vertical GaN p-n Junction Diodes

^○H. Ohta¹, K. Hayashi¹, F. Horikiri², T. Nakamura¹, T. Mishima¹ (1.Hosei Univ. (Japan), 2.Sciocs Company Ltd. (Japan))

https://doi.org/10.7567/SSDM.2017.N-6-02