13:40 〜 13:55

[N-7-01] Removal of reactive-ion-etching damage from n-GaN surface using a photoelectrochemical process

^○S. Matsumoto¹, M. Toguchi¹, T. Sato¹ (1.Hokkaido Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.N-7-01