The Japan Society of Applied Physics

1:55 PM - 2:10 PM

[N-7-02] High Thermal Stability of Abrupt SiO2/GaN Interface with Low Interface State Density

T. X. Nguyen1,2, N. Taoka2, A. Ohta1, K. Makihara1, H. Yamada2, T. Takahashi2, M. Ikeda1, M. Shimizu2, S. Miyazaki1 (1.Nagoya Univ. (Japan), 2.AIST-NU GaN Advance Device Open Innovation Lab. (Japan))

https://doi.org/10.7567/SSDM.2017.N-7-02