High Thermal Stability of Abrupt SiO<sub>2</sub>/GaN Interface with Low Interface State Density

T. X. Nguyen

doi:https://doi.org/10.7567/SSDM.2017.N-7-02

13:55 〜 14:10

[N-7-02] High Thermal Stability of Abrupt SiO₂/GaN Interface with Low Interface State Density

^○T. X. Nguyen^1,2, N. Taoka², A. Ohta¹, K. Makihara¹, H. Yamada², T. Takahashi², M. Ikeda¹, M. Shimizu², S. Miyazaki¹ (1.Nagoya Univ. (Japan), 2.AIST-NU GaN Advance Device Open Innovation Lab. (Japan))

https://doi.org/10.7567/SSDM.2017.N-7-02

2017 International Conference on Solid State Devices and Materials

[N-7-02] High Thermal Stability of Abrupt SiO2/GaN Interface with Low Interface State Density

[N-7-02] High Thermal Stability of Abrupt SiO₂/GaN Interface with Low Interface State Density