The Japan Society of Applied Physics

2:10 PM - 2:25 PM

[N-7-03] High-performance E-mode recessed GaN Power MIS-HEMT with La-silicate gate insulator

C. C. Hsu1, J. H. Lee1, Y. C. Lin1, J. C. Lin1, C. H. Wu1, J. N. Yao1, H. T. Hsu1, K. Kakushima2, H. Iwai2, E. Y. Chang1 (1.National Chiao Yung Univ. (Taiwan), 2.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2017.N-7-03