14:25 〜 14:40

[N-7-04 (Late News)] Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Channel HEMTs

^○A. Endoh¹, I. Watanabe¹, A. Kasamatsu¹, T. Mimura^1,2 (1.NICT (Japan), 2.Fujitsu Labs. Ltd. (Japan))

https://doi.org/10.7567/SSDM.2017.N-7-04