Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions

M. Sometani

doi:https://doi.org/10.7567/SSDM.2017.O-1-01

1:30 PM - 2:00 PM

[O-1-01 (Invited)] Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions

^○M. Sometani¹, M. Okamoto¹, T. Hatakeyama¹, Y. Iwahashi¹, M. Hayashi^1,2, D. Okamoto³, H. Yano³, S. Harada¹, Y. Yonezawa¹, H. Okumura¹ (1.AIST (Japan), 2.DENSO Corp. (Japan), 3.Univ. of Tsukuba (Japan))

https://doi.org/10.7567/SSDM.2017.O-1-01

2017 International Conference on Solid State Devices and Materials

[O-1-01 (Invited)] Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions