2:30 PM - 2:45 PM [O-1-04] Oxidation-induced Lattice Distortion at 4H-SiC (0001) Surface Characterized by Surface Sensitive In-plane X-ray Diffractometry ○A. D. Hatmanto1, K. Kita1 (1.Univ. of Tokyo (Japan)) https://doi.org/10.7567/SSDM.2017.O-1-04