Normally Off Diamond Metal-Oxide-Semiconductor Field-Effect-Transistor with Inversion Mode

T. Matsumoto

doi:https://doi.org/10.7567/SSDM.2017.O-3-02

10:00 〜 10:30

[O-3-02 (Invited)] Normally Off Diamond Metal-Oxide-Semiconductor Field-Effect-Transistor with Inversion Mode

^○T. Matsumoto^1,2, H. Kato², T. Makino², M. Ogura², D. Takeuchi², T. Inokuma¹, N. Tokuda^1,2, S. Yamasaki² (1.Kanazawa Univ. (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2017.O-3-02

2017 International Conference on Solid State Devices and Materials

[O-3-02 (Invited)] Normally Off Diamond Metal-Oxide-Semiconductor Field-Effect-Transistor with Inversion Mode