The Japan Society of Applied Physics

[PS-1-03] First Study of High-Ge-Content Si0.16Ge0.84 Gate Stack by Low Pressure Oxidation

J. -L. Zhang1, W. -L. Lee1, M. -L. Tsai1, G. -L. Luo2, C. -H. Chien1 (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-1-03