Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET

S. C. Kang

doi:https://doi.org/10.7567/SSDM.2017.PS-1-05

[PS-1-05] Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET

^○S. C. Kang¹, D. Lim², S. K. Lim¹, J. Noh¹, S. -M. Kim¹, S. K. Lee¹, C. Choi², B. H. Lee¹ (1.Gwangju Inst. of Sci. and Tech. (Korea), 2.Hanyang Univ. (Korea))

https://doi.org/10.7567/SSDM.2017.PS-1-05

2017 International Conference on Solid State Devices and Materials

[PS-1-05] Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET