The Japan Society of Applied Physics

[PS-1-05] Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET

S. C. Kang1, D. Lim2, S. K. Lim1, J. Noh1, S. -M. Kim1, S. K. Lee1, C. Choi2, B. H. Lee1 (1.Gwangju Inst. of Sci. and Tech. (Korea), 2.Hanyang Univ. (Korea))

https://doi.org/10.7567/SSDM.2017.PS-1-05