[PS-1-06 (Late News)] High-hole mobility GeSn on glass formed by solid-phase crystallization using an atomic density controlled precursor

^○K. Moto^1,2, K. Toko¹, R. Yoshimine¹, T. Suemasu¹ (1.Univ. of Tsukuba (Japan), 2.JSPS Res. Fellow (Japan))

https://doi.org/10.7567/SSDM.2017.PS-1-06