[PS-11-01] Enhancing Nitric Oxide Gas Sensitivity of p-Si NWs FETs with Antioxidant Surface Modification

^○P. -W. Chiu¹, H. -M. P. Chen¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.PS-11-01